2009. 8. 17 1/4 semiconductor technical data KMA3D0N20SA n-ch trench mosfet revision no : 2 general description this trench mosfet has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment. features h v dss =20v, i d =3a h drain to source on-state resistance r ds(on) =55m ? (max.) @ v gs =4.5v r ds(on) =110m ? (max.) @ v gs =2.5v h super hige dense cell design maximum rating (ta=25 ? ) dim millimeters sot-23 a bc d e 2.93 0.20 1.30+0.20/-0.150.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q note1) surface mounted on 1 u ? 1 u fr4 board, t ? 5sec. pin connection (top view) characteristic symbol n-ch unit drain to source voltage v dss 20 v gate to source voltage v gss ? 12 v drain current dc@t a =25 ? (note1) i d 3 a pulsed (note1) i dp 12 drain power dissipation t a =25 ? (note1) p d 1.25 w t a =70 ? (note1) 0.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient (note1) r thja 100 ? /w 2 3 1 gs d 1 2 3 knb downloaded from: http:///
2009. 8. 17 2/4 KMA3D0N20SA revision no : 2 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss i ds =250 a, v gs =0v, 20 - - v drain cut-off current i dss v gs =0v, v ds =16v - - 1 a gate to source leakage current i gss v gs = ? 10v, v ds =0v - - ? 100 na gate to source threshold voltage v th v ds =v gs, i d =250 a 0.5 0.8 1.5 v drain to source on resistance r ds(on) v gs =4.5v, i d =2.5a (note2) - 38 55 m ? v gs =2.5v, i d =1a (note2) - 55 110 on state drain current i d(on) v gs =4.5v, v ds =5v (note2) 12 - - a forward transconductance g fs v ds =5v, i d =2.5a (note2) - 6 - s dynamic input capaclitance c iss v ds =10v, v gs = 0v, f=1mhz - 280 - pf ouput capacitance c oss - 64 - reverse transfer capacitance c rss - 34 - total gate charge q g v ds =10v, v gs =4.5v, i d =2.5a (note2) - 4.0 - nc gate to source charge q gs - 0.9 - gate to drain charge q gd - 0.9 - turn-on delay time t d(on) v dd =10v, v gs =4.5v i d =1a, r g =6 ? (note2) - 6.3 - ns turn-on rise time t r - 7.0 - turn-off delay time t d(off) - 7.3 - turn-off fall time t f - 6.2 - source-drain diode ratings continuous source current i s - - - 3.0 a pulsed source current i sp - (note2) - - 12 a source to drain forward voltage v sdf v gs =0v, i s =1.25a - - 1.2 v note 2) pulse test : pulse width <300 k , duty cycle < 2% downloaded from: http:///
2009. 8. 17 3/4 KMA3D0N20SA revision no : 2 downloaded from: http:///
2009. 8. 17 4/4 KMA3D0N20SA revision no : 2 downloaded from: http:///
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